The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2019

Filed:

May. 16, 2017
Applicant:

Raytheon Company, Waltham, MA (US);

Inventors:

John J. Drab, Waltham, MA (US);

Jason G. Milne, Waltham, MA (US);

Assignee:

Raytheon Company, Waltham, MA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/50 (2006.01); H01L 21/54 (2006.01); H01L 21/78 (2006.01); H01L 23/10 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 21/50 (2013.01); H01L 21/54 (2013.01); H01L 21/561 (2013.01); H01L 21/78 (2013.01); H01L 23/10 (2013.01); H01L 23/3178 (2013.01); H01L 24/81 (2013.01); H01L 24/92 (2013.01); H01L 24/94 (2013.01); H01L 25/0652 (2013.01); H01L 25/50 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 24/27 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/80 (2013.01); H01L 24/83 (2013.01); H01L 2224/0381 (2013.01); H01L 2224/0384 (2013.01); H01L 2224/04 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05687 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13109 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/1703 (2013.01); H01L 2224/17181 (2013.01); H01L 2224/2781 (2013.01); H01L 2224/2784 (2013.01); H01L 2224/291 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/80205 (2013.01); H01L 2224/80487 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/81825 (2013.01); H01L 2224/83203 (2013.01); H01L 2224/83896 (2013.01); H01L 2224/9222 (2013.01); H01L 2224/92222 (2013.01); H01L 2224/92225 (2013.01); H01L 2224/94 (2013.01); H01L 2225/06506 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06555 (2013.01); H01L 2225/06572 (2013.01); H01L 2225/06586 (2013.01); H01L 2225/06589 (2013.01); H01L 2924/10155 (2013.01); H01L 2924/15151 (2013.01); H01L 2924/15153 (2013.01); H01L 2924/163 (2013.01);
Abstract

Structures and methods of fabricating semiconductor wafer assemblies that encapsulate one or die in a cavity etched into an oxide bonded semiconductor wafer stack. The methods generally include the steps of positioning the die in the cavity, mechanically and electrically mounting the die to the wafer stack, and encapsulating the die within the cavity by bonding a lid wafer to the wafer stack in one of multiple ways. Semiconductor processing steps are applied to construct the assemblies (e.g., deposition, annealing, chemical and mechanical polishing, etching, etc.) and connecting the die (e.g., bump bonding, wire interconnecting, ultrasonic bonding, oxide bonding, etc.) according to the embodiments described above.


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