The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2019
Filed:
Aug. 18, 2017
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Junji Kotani, Atsugi, JP;
Norikazu Nakamura, Sagamihara, JP;
FUJITSU LIMITED, Kawasaki, JP;
Abstract
A disclosed semiconductor device includes a buffer layer formed of a compound semiconductor on a substrate, a first semiconductor layer formed of a compound semiconductor on the buffer layer, a second semiconductor layer formed of a compound semiconductor on the first semiconductor layer, a gate electrode, a source electrode, and a drain electrode formed on the second semiconductor layer, and a heat dissipation part formed below the gate electrode. In the semiconductor device, all or part of the second semiconductor layer and the first semiconductor layer is present between the gate electrode and the heat dissipation part, the heat dissipation part includes a heat dissipation layer and a first intermediate layer formed between the heat dissipation layer and both of the buffer layer and first semiconductor layer, and the heat dissipation layer is formed of a material containing carbon.