The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2019

Filed:

Nov. 19, 2015
Applicant:

Institut Vedecom, Versailles, FR;

Inventors:

Thomas Fouet, Pontarlier, FR;

Philippe Banet, Acheres, FR;

Linda Chikh, Maisons-Laffitte, FR;

Odile Fichet, Poissy, FR;

Assignees:

INSTITUT VEDECOM, Versailles, FR;

UNIVERSITE DE CERGY PONTOISE, Cergy-Pontoise, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/29 (2006.01); H01L 33/56 (2010.01); H01L 33/52 (2010.01); H01L 23/28 (2006.01); C08G 77/12 (2006.01); C08G 77/20 (2006.01); C08L 83/04 (2006.01); H01L 21/56 (2006.01); C08K 5/56 (2006.01); C08L 83/00 (2006.01); H01L 23/24 (2006.01);
U.S. Cl.
CPC ...
H01L 23/296 (2013.01); C08G 77/12 (2013.01); C08G 77/20 (2013.01); C08K 5/56 (2013.01); C08L 83/00 (2013.01); C08L 83/04 (2013.01); H01L 21/56 (2013.01); H01L 23/28 (2013.01); H01L 23/29 (2013.01); H01L 23/293 (2013.01); H01L 33/52 (2013.01); H01L 33/56 (2013.01); C08L 2203/206 (2013.01); C08L 2205/025 (2013.01); H01L 23/24 (2013.01); H01L 2924/0002 (2013.01);
Abstract

The invention relates to an electronic component () comprising at least one semiconductor chip () and at least one substrate (), the semiconductor chip () being encapsulated in a polyorganosiloxane resin (), which is the result of hardening a composition comprising at least: one portion (A) comprising at least one polyorganosiloxane (A1) which contains at least two —CH═CHreactive groups per molecule; one portion (B) comprising a polyorganosiloxane (B1) which comprises at least two Si—H groups per molecule; and at least one hydrosilation catalyst (C1), the components (A1) and (B1) being in quantities such that the molar ratio of Si—H/—CH═CHin the composition is no lower than 0.4.


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