The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2019
Filed:
Jan. 09, 2014
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); G01R 31/12 (2006.01); G01R 31/26 (2014.01); G01R 31/28 (2006.01); G01R 31/02 (2006.01);
U.S. Cl.
CPC ...
H01L 22/34 (2013.01); G01R 31/129 (2013.01); G01R 31/2642 (2013.01); G01R 31/2894 (2013.01); G01R 31/025 (2013.01);
Abstract
A semiconductor wafer includes dielectric regions of different thicknesses, some of the dielectric regions being thinner and other ones of the dielectric regions being thicker. The semiconductor wafer further includes a stress circuit operable to stress at least one of the dielectric regions internally within the semiconductor wafer for assessing dielectric reliability. A corresponding method of internally assessing dielectric reliability of a semiconductor technology is also provided.