The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2019

Filed:

Sep. 01, 2017
Applicant:

Board of Regents, the University of Texas System, Austin, TX (US);

Inventors:

Deji Akinwande, Austin, TX (US);

Li Tao, Austin, TX (US);

Carlo Grazianetti, Borgo Ticino, IT;

Alessandro Molle, Vimercate, IT;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 21/683 (2006.01); H01L 21/02 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32133 (2013.01); H01L 21/0242 (2013.01); H01L 21/0259 (2013.01); H01L 21/02178 (2013.01); H01L 21/02381 (2013.01); H01L 21/02521 (2013.01); H01L 21/02532 (2013.01); H01L 21/02535 (2013.01); H01L 21/02631 (2013.01); H01L 21/6835 (2013.01); H01L 29/66772 (2013.01); H01L 29/78603 (2013.01); H01L 29/78654 (2013.01); H01L 29/78696 (2013.01); H01L 2221/68363 (2013.01);
Abstract

A field-effect transistor and method for fabricating such a field-effect transistor that utilizes an air-sensitive two-dimensional material (e.g., silicene). A film of air-sensitive two-dimensional material is deposited on a crystalized metallic (e.g., Ag) thin film on a substrate (e.g., mica substrate). A capping layer of insulating material (e.g., aluminum oxide) is deposited on the air-sensitive two-dimensional material. The substrate is detached from the metallic thin film/air-sensitive two-dimensional material/insulating material stack structure. The metallic thin film/air-sensitive two-dimensional material/insulating material stack structure is then flipped. The flipped metallic thin film/air-sensitive two-dimensional material/insulating material stack structure is attached to a device substrate followed by having the metallic thin film etched to form contact electrodes. In this manner, the pristine properties of air-sensitive two-dimensional materials are preserved from degradation when exposed to air. Furthermore, this new technique allows safe transfer and device fabrication of air-sensitive two-dimensional materials with a low material and process cost.


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