The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2019

Filed:

Mar. 06, 2015
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Adolph Miller Allen, Oakland, CA (US);

Zhenbin Ge, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/35 (2006.01); H01L 21/033 (2006.01); C23C 14/06 (2006.01); H01L 21/285 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0338 (2013.01); C23C 14/0641 (2013.01); C23C 14/354 (2013.01); H01L 21/2855 (2013.01); H01L 21/31144 (2013.01);
Abstract

Methods for depositing a metal-containing layer atop a substrate disposed in a PVD chamber are provided herein. In some embodiments, such a method includes: providing a plasma forming gas to a processing region of the PVD chamber; providing a first amount of RF power to a target assembly disposed opposite the substrate to form a plasma within the processing region of the PVD chamber; sputtering source material from the target assembly to deposit a metal-containing layer onto the substrate, wherein the source material is at a first erosion state; and increasing the first amount of RF power provided to the target assembly by a predetermined amount while sputtering the source material, wherein the predetermined amount is determined by a second amount of RF power provided to the target assembly to maintain a desired ionization rate of source material at a second erosion state.


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