The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2019
Filed:
May. 18, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Guillaume Bouche, Albany, NY (US);
Vimal Kamineni, Mechanicville, NY (US);
Assignee:
GLOBALFOUNDARIES INC., Grand Cayman, KY;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02175 (2013.01); H01L 21/02205 (2013.01); H01L 21/28026 (2013.01); H01L 21/28185 (2013.01); H01L 21/28194 (2013.01); H01L 29/4966 (2013.01); H01L 29/785 (2013.01);
Abstract
A method of fabricating a FinFET device includes forming contact openings for source/drain contacts prior to performing a replacement metal gate (RMG) module. Etch selective metals are used to form source/drain contacts and gate contacts optionally within active device regions using a block and recess technique.