The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2019

Filed:

Mar. 25, 2010
Applicants:

Nan Chen, San Diego, CA (US);

Ritu Chaba, San Diego, CA (US);

Inventors:

Nan Chen, San Diego, CA (US);

Ritu Chaba, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 7/06 (2006.01); G11C 7/08 (2006.01); G11C 7/12 (2006.01);
U.S. Cl.
CPC ...
G11C 7/065 (2013.01); G11C 7/00 (2013.01); G11C 7/08 (2013.01); G11C 7/12 (2013.01);
Abstract

A sense amplifier and method thereof are provided. The sense amplifier includes first and second transistors coupled to first and second bit lines, respectively. The first and second transistors are configured to connect the first and second bit lines to a differential amplifier during a first state (e.g., when a differential voltage is present on the first and second bit lines and prior to a sense signal transition) and to isolate the first and second bit lines from the differential amplifier during a second state (e.g., after the sense signal transition). The sense amplifier further includes a third transistor configured to deactivate the differential amplifier during the first state and configured to activate the differential amplifier during the second state.


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