The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2019

Filed:

Feb. 27, 2015
Applicant:

Hitachi, Ltd., Tokyo, JP;

Inventors:

Atsushi Kawamura, Tokyo, JP;

Masahiro Arai, Tokyo, JP;

Kazuhisa Fujimoto, Tokyo, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G06F 12/02 (2006.01); G06F 12/00 (2006.01); G06F 12/16 (2006.01); G11C 16/16 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G06F 12/0246 (2013.01); G06F 3/064 (2013.01); G06F 3/0647 (2013.01); G06F 3/0679 (2013.01); G06F 12/00 (2013.01); G06F 12/02 (2013.01); G06F 12/16 (2013.01); G11C 16/16 (2013.01); G11C 16/3495 (2013.01); G06F 3/0646 (2013.01); G06F 3/0652 (2013.01);
Abstract

A write frequency of a non-volatile memory is determined at a fine granularity while suppressing consumption of the volatile memory. When it is determined that a copy of specified data from a specified physical storage area to another physical storage area is to be executed, a controller reads the specified data and specified write frequency information, selects a write destination physical storage area group from a plurality of physical storage area groups based on the specified write frequency information and classification information, selects a write destination physical storage area from the write destination physical storage area group, changes the specified write frequency information, writes the specified data to the write destination physical storage area, writes the changed specified write frequency information to the non-volatile memory, and updates translation information based on the write destination physical storage area group and the write destination physical storage area.


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