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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10241412 B1

PDFFull Text
Date of Patent:
Mar. 26, 2019

Filed:

Mar. 08, 2018

Resist underlayer film composition, patterning process, and method for forming resist underlayer film

Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Hiroko Nagai, Joetsu, JP;

Takeru Watanabe, Joetsu, JP;

Daisuke Kori, Joetsu, JP;

Tsutomu Ogihara, Joetsu, JP;

Assignee:

SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Karen Kusumakar

Int. Cl.
CPC ...
G03F 7/11 (2006.01); G03F 7/09 (2006.01); C07C 39/14 (2006.01); C07C 39/15 (2006.01); C07C 49/83 (2006.01); C08F 220/28 (2006.01); C08F 220/32 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01); G03F 7/38 (2006.01); H01L 21/266 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); C07C 39/14 (2013.01); C07C 39/15 (2013.01); C07C 49/83 (2013.01); C08F 220/28 (2013.01); C08F 220/32 (2013.01); G03F 7/094 (2013.01); G03F 7/16 (2013.01); G03F 7/168 (2013.01); G03F 7/2041 (2013.01); G03F 7/322 (2013.01); G03F 7/38 (2013.01); H01L 21/266 (2013.01); H01L 21/3081 (2013.01); H01L 21/31133 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); C07C 2603/18 (2017.05); C08F 2220/283 (2013.01); G03F 7/091 (2013.01);
Abstract

Provided is a resist underlayer film composition which is excellent in resistance to a basic hydrogen peroxide aqueous solution, in gap-filling and planarization characteristics, and in dry etching characteristic, wherein the resist underlayer film composition is used for a multilayer resist method, comprising: (A1) a polymer (1A) comprising one, or two or more, of a repeating unit represented by following general formula (1); (A2) one, or two or more, of a polyphenol compound having a formula weight of 2,000 or less and not having a 3,4-dihydroxy phenyl group; and (B) an organic solvent.

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