The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2019
Filed:
Sep. 08, 2015
Applicant:
Toshiba Memory Corporation, Tokyo, JP;
Inventors:
Assignee:
Toshiba Memory Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/72 (2012.01); G03F 1/74 (2012.01); G03F 1/80 (2012.01);
U.S. Cl.
CPC ...
G03F 1/72 (2013.01); G03F 1/74 (2013.01); G03F 1/80 (2013.01);
Abstract
In a pattern formation method according to an embodiment, a resist pattern is formed on a first film formed on a substrate. In the process for forming the resist pattern, the resist pattern includes a first pattern including a defect in a predetermined region on the first film. Next, a second film is accumulated on the first pattern in the predetermined region. Furthermore, a second pattern is formed in the first film with the resist pattern and the second film. Then, a third pattern is formed in the predetermined region on the first film.