The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2019

Filed:

Apr. 11, 2018
Applicant:

Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd., Zhuhai, CN;

Inventors:

Dror Hurwitz, Zhuhai, CN;

Alex Huang, Zhuhai, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03H 7/01 (2006.01); H03H 3/00 (2006.01); H01L 27/01 (2006.01); H03H 1/00 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H03H 7/0138 (2013.01); H01L 27/016 (2013.01); H03H 3/00 (2013.01); H03H 7/0115 (2013.01); H01L 28/10 (2013.01); H01L 28/60 (2013.01); H03H 2001/0085 (2013.01);
Abstract

A method of fabricating a composite electronic structure for coupling an IC Chip to a substrate, the composite electronic structure comprising: at least one metal feature layer and at least one adjacent metal via layer, said layers being embedded in a dielectric comprising a polymer matrix and extending in an X-Y plane and having height, wherein the composite electronic structure further comprises, at least one capacitor coupled with at least one inductor, the at least one capacitor comprising a selected feature in a feature layer forming a lower electrode, and depositing a ceramic dielectric layer over said selected feature, applying a layer of photoresist, patterning the photoresist with a via post over said ceramic dielectric layer, sputtering a copper seed layer and electroplating copper into the pattern to form said via post over said ceramic dielectric layer, such that the ceramic dielectric layer is sandwiched between the selected feature layer and the via post, such that the via post stands on the ceramic dielectric layer, and forms an upper electrode whose capacitance is proportional to the area of the via post forming the upper electrode, and wherein the at least one inductor is formed in at least one of the at least one feature layer and the adjacent via layer by electroplating copper into a pattern of photoresist stripping away the photoresist and laminating.


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