The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2019

Filed:

Aug. 22, 2017
Applicant:

Murata Manufacturing Co., Ltd., Kyoto, JP;

Inventors:

Shota Ishihara, Kyoto, JP;

Yuji Shintomi, Kyoto, JP;

Satoshi Matsumura, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/191 (2006.01); H03F 1/56 (2006.01); H03F 3/193 (2006.01); H03F 3/195 (2006.01); H03H 7/38 (2006.01);
U.S. Cl.
CPC ...
H03F 1/565 (2013.01); H03F 3/193 (2013.01); H03F 3/195 (2013.01); H03H 7/38 (2013.01); H03F 2200/225 (2013.01); H03F 2200/237 (2013.01); H03F 2200/387 (2013.01); H03F 2200/391 (2013.01); H03F 2200/402 (2013.01); H03F 2200/451 (2013.01); H03F 2203/21124 (2013.01);
Abstract

A power amplifier module includes an amplifier that amplifies an input signal and outputs the amplified signal, a harmonic termination circuit that is disposed subsequent to the amplifier and that attenuates a harmonic component of the amplified signal, the harmonic termination circuit including at least one field effect transistor (FET), and a control circuit that controls a gate voltage of the at least one FET to adjust a capacitance value of a parasitic capacitance of the at least one FET. The control circuit adjusts the capacitance value of the parasitic capacitance of the at least one FET, and thereby a resonance frequency of the harmonic termination circuit is adjusted.


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