The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2019

Filed:

Aug. 02, 2017
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Bayaner Arigong, San Jose, CA (US);

Richard Wilson, Morgan Hill, CA (US);

Haedong Jang, San Jose, CA (US);

Frank Trang, San Jose, CA (US);

Timothy Canning, Morgan Hill, CA (US);

Rongguo Zhou, Gilroy, CA (US);

Bjoern Herrmann, Morgan Hill, CA (US);

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/14 (2006.01); H03F 1/56 (2006.01); H03F 3/195 (2006.01); H01L 23/66 (2006.01);
U.S. Cl.
CPC ...
H03F 1/565 (2013.01); H01L 23/66 (2013.01); H03F 3/195 (2013.01); H01L 2223/6611 (2013.01); H01L 2223/6655 (2013.01); H03F 2200/222 (2013.01); H03F 2200/225 (2013.01); H03F 2200/387 (2013.01); H03F 2200/391 (2013.01); H03F 2200/451 (2013.01);
Abstract

An RF package includes a metal flange, an RF input lead, an RF output lead, and an electrically conductive die attach area. An RF transistor that is configured to amplify an RF signal is mounted in the die attach area. The RF transistor includes an input terminal that is electrically coupled to the RF input lead, an output terminal that is electrically coupled to the RF output lead, and a reference potential terminal that is electrically connected to the die attach area. A first capacitor having one or more upper metal plates, and a dielectric region is mounted in the die attach area and is electrically coupled to the RF transmission path of the RF signal. The first capacitor is configured to simultaneously match an impedance of the RF transistor at a fundamental frequency of the RF signal and to filter a higher order harmonic of the fundamental frequency.


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