The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2019
Filed:
Aug. 03, 2016
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-do, KR;
Jaehun Seo, Suwon-si, KR;
Jong-Kyu Kim, Seongnam-si, KR;
Jung-Ik Oh, Hwaseong-si, KR;
Inho Kim, Suwon-si, KR;
Jongchul Park, Seongnam-si, KR;
Gwang-Hyun Baek, Seoul, KR;
Hyun-woo Yang, Suwon-si, KR;
Abstract
Provided herein are methods of fabricating a magnetic memory device including forming magnetic tunnel junction patterns on a substrate, forming an interlayered insulating layer on the substrate to cover the magnetic tunnel junction patterns, forming a conductive layer on the interlayered insulating layer, patterning the conductive layer to form interconnection patterns electrically connected to the magnetic tunnel junction patterns, and performing a cleaning process on the interconnection patterns. The cleaning process is performed using a gas mixture of a first gas and a second gas. The first gas contains a hydrogen element (H), and the second gas contains a source gas different from that of the first gas.