The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10236440 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 19, 2019

Filed:

Feb. 21, 2018
Applicant:

Ablic Inc., Chiba-shi, Chiba, JP;

Inventor:

Takaaki Hioka, Chiba, JP;

Assignee:

ABLIC INC., Chiba-Shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/06 (2006.01); H01L 27/22 (2006.01); H01L 43/04 (2006.01); G01R 33/07 (2006.01);
U.S. Cl.
CPC ...
H01L 43/065 (2013.01); G01R 33/077 (2013.01); H01L 27/22 (2013.01); H01L 43/04 (2013.01);
Abstract

The vertical Hall element includes: a second conductivity type semiconductor layer; electrodes aligned along a straight line in a surface of the semiconductor layer, and each include a second conductivity type impurity region that is higher in concentration than semiconductor layer; and first conductivity type electrode isolation diffusion layers isolating the electrodes from one another, each of the electrode isolation diffusion layers being provided between each pair of the electrodes in the surface of the semiconductor layer, the electrodes including an electrode that functions as a drive current supply electrode and an electrode that functions as a Hall voltage output electrode, the drive current supply electrode and the Hall voltage output electrode being arranged alternately, the Hall voltage output electrode having a first depth, the drive current supply electrode having a second depth that is larger than the first depth and a depth of the electrode isolation diffusion layers.


Find Patent Forward Citations

Hioka, Takaaki. (2019). Semiconductor device (U.S. Patent No. 10236440). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10236440

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