The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2019

Filed:

Oct. 26, 2016
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Chih-Chiang Lu, Hsinchu, TW;

Yi-Chieh Lin, Hsinchu, TW;

Wen-Luh Liao, Hsinchu, TW;

Shou-Lung Chen, Hsinchu, TW;

Chien-Fu Huang, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/10 (2010.01); H01L 33/08 (2010.01); H01L 27/15 (2006.01); H01L 33/50 (2010.01); H01L 33/56 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/08 (2013.01); H01L 27/15 (2013.01); H01L 33/005 (2013.01); H01L 33/0062 (2013.01); H01L 33/10 (2013.01); H01L 33/50 (2013.01); H01L 33/56 (2013.01); H01L 33/62 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A light-emitting device comprises a first light-emitting semiconductor stack comprising a first active layer; a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer; a reflector between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack; a protecting layer between the reflector and the second light-emitting semiconductor stack; and wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer and a second semiconductor layer sandwiching the first active layer, the second light-emitting semiconductor stack further comprises a third semiconductor layer and a fourth semiconductor layer sandwiching the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap and the second band gap.


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