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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10236408 B1

PDFFull Text
Date of Patent:
Mar. 19, 2019

Filed:

Aug. 28, 2017

Method for manufacturing semiconductor device

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Shunpei Yamazaki, Setagaya, JP;

Masataka Sato, Tochigi, JP;

Naoki Ikezawa, Tochigi, JP;

Junpei Yanaka, Tochigi, JP;

Satoru Idojiri, Tochigi, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;

Attorneys:

Robinson Intellectual Property Law Office

Eric J. Robinson

Primary Examiner:

Selim Ahmed

Assistant Examiner:

Evan Clinton

Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 21/683 (2006.01); H01L 51/00 (2006.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1892 (2013.01); H01L 21/02345 (2013.01); H01L 21/02488 (2013.01); H01L 21/02694 (2013.01); H01L 21/6835 (2013.01); H01L 27/1266 (2013.01); H01L 29/66969 (2013.01); H01L 31/1896 (2013.01); H01L 51/003 (2013.01); H01L 2221/68386 (2013.01); H01L 2224/83052 (2013.01); H01L 2924/35121 (2013.01);
Abstract

The yield of a manufacturing process of a semiconductor device is increased. The productivity of a semiconductor device is increased. A first material layer is formed over a substrate, a second material layer is formed over the first material layer, and the first material layer and the second material layer are separated from each other, so that a semiconductor device is manufactured. In addition, a stack including the first material layer and the second material layer is preferably heated before the separation. The first material layer includes one or more of hydrogen, oxygen, and water. The first material layer includes a metal oxide, for example. The second material layer includes a resin (e.g., polyimide or acrylic). The first material layer and the second material layer are separated from each other by cutting a hydrogen bond. The first material layer and the second material layer are separated from each other in such a manner that water separated out by heat treatment at an interface between the first material layer and the second material layer or in the vicinity of the interface is irradiated with light.

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