The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2019
Filed:
Jun. 22, 2017
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Keiji Okumura, Matsumoto, JP;
Setsuko Wakimoto, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A silicon carbide semiconductor device, including a silicon carbide substrate, multiple trenches provided in the silicon carbide substrate, a first semiconductor region provided between each adjacent two of the trenches, a second semiconductor region selectively provided in the first semiconductor region, multiple third semiconductor regions selectively provided in the silicon carbide substrate to each cover a bottom of one trench, multiple fourth semiconductor regions selectively provided in the silicon carbide substrate, each between adjacent two of the trenches and being in contact with the first semiconductor region, multiple gate electrodes, each provided via a gate insulating film in one of the trenches, a first electrode connected to the first and second semiconductor regions, and a second electrode connected to the rear surface of the silicon carbide substrate. At least two of the trenches are arranged between each adjacent two of the fourth semiconductor regions.