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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10236357 B1

PDFFull Text
Date of Patent:
Mar. 19, 2019

Filed:

Sep. 07, 2017

Semiconductor device and manufacturing method of the same

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Yasumasa Yamane, Kanagawa, JP;

Ryo Tokumaru, Kanagawa, JP;

Hiromi Sawai, Kanagawa, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;

Attorneys:

Nixon Peabody LLP

Jeffrey L. Costellia

Primary Examiner:

Errol Fernandes

Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 21/443 (2006.01); H01L 29/24 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/78 (2006.01); H01L 21/66 (2006.01); H01L 23/544 (2006.01); H01L 27/105 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4908 (2013.01); H01L 21/443 (2013.01); H01L 29/24 (2013.01); H01L 29/42384 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78648 (2013.01); H01L 21/4825 (2013.01); H01L 21/4842 (2013.01); H01L 21/565 (2013.01); H01L 21/78 (2013.01); H01L 22/14 (2013.01); H01L 23/544 (2013.01); H01L 27/1052 (2013.01); H01L 27/124 (2013.01); H01L 27/1207 (2013.01); H01L 27/1225 (2013.01); H01L 27/1255 (2013.01);
Abstract

A semiconductor device having stable electrical characteristics is provided. A semiconductor device that can be miniaturized or highly integrated is provided. One embodiment of the present invention includes a transistor including an oxide, a first barrier layer over the transistor, and a second barrier layer in contact with the first barrier layer. The oxide is in contact with an insulator including an excess-oxygen region. The insulator is in contact with the first barrier layer. The first barrier layer has a thickness greater than or equal to 0.5 nm and less than or equal to 1.5 nm. The second barrier layer is thicker than the first barrier layer.

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