The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2019
Filed:
Feb. 17, 2017
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Shintaro Nakano, Kawasaki, JP;
Tatsuo Shimizu, Shinagawa, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
A semiconductor device of an embodiment includes a first nitride semiconductor layer, a second nitride semiconductor layer located on the first nitride semiconductor layer and having a larger bandgap than the first nitride semiconductor layer, a first electrode on the second nitride semiconductor layer, a second electrode on the second nitride semiconductor layer, a gate electrode located between the first electrode and the second electrode, and a first insulating layer located at least between the gate electrode and the second electrode on the second nitride semiconductor layer, the first insulating layer being an oxide of at least one first element selected from the group consisting of Hf, Zr, and Ti, and containing 5×10cmor more of at least one second element selected from the group consisting of F, H, D, V, Nb, and Ta, and 5×10cmor more of at least one third element selected from the group consisting of N, P, As, Sb, Bi, Be, Mg, Ca, Sr, Ba, Sc, Y, and lanthanoids.