The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2019
Filed:
Apr. 20, 2016
Applicant:
Showa Denko K.k., Tokyo, JP;
Inventors:
Yuuki Furuya, Sendai, JP;
Tomohiro Shonai, Hikone, JP;
Yasushi Urakami, Toyoake, JP;
Itaru Gunjishima, Nagakute, JP;
Assignee:
SHOWA DENKO K.K., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/36 (2006.01); C30B 33/00 (2006.01); H01L 29/04 (2006.01); C30B 23/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/045 (2013.01); C30B 23/025 (2013.01); C30B 29/36 (2013.01); C30B 33/00 (2013.01);
Abstract
A SiC single crystal seed of the present invention has a main surface with an offset angle of at least 2° but not more than 20° relative to the {0001} plane, and at least one sub-growth surface, wherein the sub-growth surface includes an initial facet formation surface that is on the offset upstream side of the main surface and has an inclination angle θ relative to the {0001} plane with an absolute value of less than 2° in any direction, and the initial facet formation surface has a screw dislocation starting point.