The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2019

Filed:

Oct. 07, 2015
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Ryoji Suzuki, Kanagawa, JP;

Hitoshi Moriya, Tokyo, JP;

Atsuhiro Ando, Kanagawa, JP;

Atsushi Masagaki, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 27/146 (2006.01); H01L 31/0224 (2006.01); H04N 5/369 (2011.01); H01L 31/102 (2006.01); H04N 5/378 (2011.01); H04N 5/232 (2006.01); H04N 5/374 (2011.01); H04N 9/04 (2006.01); H01L 27/148 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14609 (2013.01); H01L 27/146 (2013.01); H01L 27/1462 (2013.01); H01L 27/1464 (2013.01); H01L 27/14621 (2013.01); H01L 27/14623 (2013.01); H01L 27/14643 (2013.01); H01L 27/14645 (2013.01); H01L 27/14659 (2013.01); H01L 27/14667 (2013.01); H01L 31/022441 (2013.01); H01L 31/102 (2013.01); H04N 5/23212 (2013.01); H04N 5/369 (2013.01); H04N 5/374 (2013.01); H04N 5/378 (2013.01); H04N 9/045 (2013.01); H01L 27/14627 (2013.01); H01L 27/14634 (2013.01); H01L 27/14636 (2013.01); H01L 27/14812 (2013.01);
Abstract

The present technology relates to a solid-state imaging element and an electronic device capable of improving image quality of the solid-state imaging element. The solid-state imaging element includes a photoelectric conversion unit adapted to photoelectrically convert incident light incident from a predetermined incident surface. Also, the solid-state imaging element includes a wire arranged on a bottom surface side that is an opposite surface of the incident surface of the photoelectric conversion unit, and formed with a protruding pattern on a surface facing the photoelectric conversion unit. The present technology can be applied to, for example, a solid-state imaging element such as a CMOS image sensor, and an electronic device including the solid-state imaging element.


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