The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2019
Filed:
Apr. 13, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Chanmin Lee, Hwaseong-si, KR;
Youngjae Kim, Yongin-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A method of fabricating a semiconductor device includes forming a material layer and a mask pattern on a substrate, mounting the substrate onto an electrostatic chuck, loading the substrate, including the material layer and the mask pattern, mounted on the electrostatic chuck, into an etching chamber, and forming a material pattern by dry etching the material layer using the mask pattern as an etching mask. The dry etching of the material layer includes adjusting a pressure of the etching chamber to adjust a lateral over-etch of the material pattern in a first direction, wherein the first direction is parallel to a surface of the substrate facing the material pattern, and adjusting a temperature of the electrostatic chuck to adjust an etching of the material pattern in a second direction, wherein the second direction crosses the first direction.