The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2019
Filed:
Apr. 28, 2016
Applicant:
Coolstar Technology, Inc., Sunnyvale, CA (US);
Inventor:
Shuming Xu, Sunnyvale, CA (US);
Assignee:
COOLSTAR TECHNOLOGY, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/93 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 29/94 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 21/8234 (2013.01); H01L 28/60 (2013.01); H01L 28/90 (2013.01); H01L 29/0688 (2013.01); H01L 29/94 (2013.01); H01L 29/945 (2013.01); H01L 29/66659 (2013.01); H01L 29/7835 (2013.01); H01L 29/93 (2013.01);
Abstract
A power semiconductor device includes a substrate of a first conductivity type, a buried layer of a second conductivity type formed in at least a portion of the substrate, and at least one epitaxial layer of the first conductivity type formed on at least a portion of an upper surface of the substrate and covering the buried layer. The epitaxial layer and the buried layer form a junction capacitor. The device further includes at least one active power transistor formed in an upper surface of the epitaxial layer and above at least a portion of the buried layer.