The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2019
Filed:
Jul. 03, 2017
Globalfoundries Inc., Grand Cayman, KY;
Robert J. Fox, III, Greenfield Center, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Structures for interconnects and methods for forming interconnects. A dual-damascene opening is formed in a dielectric layer and a first liner is formed on the dielectric layer at one or more sidewalls of the dual-damascene opening. A first conductor layer is formed in a portion of the dual-damascene opening. The first liner is removed from the one or more sidewalls of the dual-damascene opening vertically between the first conductor layer and a top surface of the dielectric layer. After the first liner is removed, a second liner is formed on the dielectric layer at the one or more sidewalls of the dual-damascene opening between the first conductor layer and the top surface of the dielectric layer. A second conductor layer is formed in the dual-damascene opening between the first conductor layer and the top surface of the dielectric layer. The first and second liner materials differ in composition.