The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2019
Filed:
May. 12, 2017
Applicant:
Hexagem Ab, Hjarup, SE;
Inventors:
Jonas Ohlsson, Malmö, SE;
Mikael Bjork, Lomma, SE;
Assignee:
HEXAGEM AB, Hjarup, SE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); H01L 21/306 (2006.01); H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 27/085 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/786 (2006.01); H01L 29/861 (2006.01); H01L 29/872 (2006.01); H01L 29/10 (2006.01); H01L 29/04 (2006.01); H01L 29/20 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/812 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); H01L 21/0237 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02513 (2013.01); H01L 21/02603 (2013.01); H01L 21/02636 (2013.01); H01L 21/02639 (2013.01); H01L 21/02647 (2013.01); H01L 21/30612 (2013.01); H01L 27/0207 (2013.01); H01L 27/0605 (2013.01); H01L 27/085 (2013.01); H01L 29/0676 (2013.01); H01L 29/1075 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/78642 (2013.01); H01L 29/78681 (2013.01); H01L 29/861 (2013.01); H01L 29/872 (2013.01); H01L 29/045 (2013.01); H01L 29/0657 (2013.01); H01L 29/2003 (2013.01); H01L 29/402 (2013.01); H01L 29/41758 (2013.01); H01L 29/42316 (2013.01); H01L 29/812 (2013.01);
Abstract
GaN based nanowires are used to grow high quality, discreet base elements with c-plane top surface for fabrication of various semiconductor devices, such as diodes and transistors for power electronics.