The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2019
Filed:
Aug. 22, 2017
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
David Kohen, Phoenix, AZ (US);
Harald Benjamin Profijt, Veldhoven, NL;
Assignee:
ASM IP Holding B.V.., Almere, NL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 29/165 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/45 (2006.01); H01L 23/535 (2006.01); C30B 29/52 (2006.01); C30B 25/02 (2006.01); C23C 16/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02535 (2013.01); C23C 16/06 (2013.01); C30B 25/02 (2013.01); C30B 29/52 (2013.01); H01L 21/0262 (2013.01); H01L 21/02579 (2013.01); H01L 21/28518 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/45 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/7848 (2013.01); H01L 29/7851 (2013.01);
Abstract
A method for depositing a germanium tin (GeSn) semiconductor is disclosed. The method may include; providing a substrate within a reaction chamber, heating the substrate to a deposition temperature and exposing the substrate to a germanium precursor and a tin precursor. The method may further include; depositing a germanium tin (GeSn) semiconductor on the surface of the substrate, and exposing the germanium tin (GeSn) semiconductor to a boron dopant precursor. Semiconductor device structures including a germanium tin (GeSn) semiconductor formed by the methods of the disclosure are also provided.