The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2019

Filed:

Nov. 14, 2016
Applicant:

Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;

Inventors:

Audrey Sanchot, Grenoble, FR;

Bernard Aventurier, Saint Joseph de Riviere, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/50 (2010.01); B05D 1/00 (2006.01); G03F 7/00 (2006.01); B05D 3/06 (2006.01); B05D 3/10 (2006.01); B05D 3/14 (2006.01); F21V 9/08 (2018.01); F21Y 115/10 (2016.01);
U.S. Cl.
CPC ...
B05D 1/005 (2013.01); B05D 3/06 (2013.01); B05D 3/107 (2013.01); B05D 3/145 (2013.01); F21V 9/08 (2013.01); G03F 7/0007 (2013.01); H01L 33/502 (2013.01); H01L 33/505 (2013.01); H01L 33/508 (2013.01); F21Y 2115/10 (2016.08); H01L 33/504 (2013.01); H01L 2933/0041 (2013.01);
Abstract

A method of manufacturing a layer containing quantum dots, the layer including first regions where the quantum dots are active and second regions where the quantum dots are inactive, the method including: a) depositing on a support a first layer of a matrix containing quantum dots; b) depositing on the first layer a second resist layer; c) exposing the second layer to light through a mask delimiting the first and second regions, and then developing the resin of the second layer to remove the resin of the second layer opposite the second regions while keeping it opposite the first regions; and d) removing the resin of the second layer opposite the first regions without removing the first layer.


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