The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2019

Filed:

Feb. 05, 2016
Applicants:

Autonetworks Technologies, Ltd., Yokkaichi, Mie, JP;

Sumitomo Wiring Systems, Ltd., Yokkaichi, Mie, JP;

Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;

Inventors:

Kazuki Masuda, Mie, JP;

Byeongsu Jeong, Mie, JP;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 17/74 (2006.01); H03K 17/687 (2006.01); H03K 17/082 (2006.01); H03K 17/16 (2006.01); H03K 17/0812 (2006.01);
U.S. Cl.
CPC ...
H03K 17/687 (2013.01); H03K 17/0822 (2013.01); H03K 17/08122 (2013.01); H03K 17/16 (2013.01); H03K 2217/0054 (2013.01);
Abstract

A control portion and semiconductor switches included in a power supply system function as a current control device. The source of the semiconductor switch is connected to the source of the semiconductor switch. The two semiconductor switches connect the respective positive electrodes of a first power storage element and a second power storage element to each other. The control portion controls a current flowing between the drains of the two semiconductor switches by substantially simultaneously turning on or off the two semiconductor switches. The respective breakdown voltages between the drain and the source of the two semiconductor switches are different from each other.


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