The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2019
Filed:
Mar. 28, 2018
Applicant:
Cornell University, Ithaca, NY (US);
Inventors:
Assignee:
Cornell University, Ithaca, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/10 (2006.01); H01S 3/08 (2006.01); H01S 5/042 (2006.01); H01S 5/065 (2006.01); G02F 1/35 (2006.01); H01S 5/00 (2006.01); H01S 3/067 (2006.01);
U.S. Cl.
CPC ...
H01S 3/08013 (2013.01); G02F 1/3526 (2013.01); H01S 3/06725 (2013.01); H01S 3/06741 (2013.01); H01S 3/06754 (2013.01); H01S 5/0057 (2013.01); H01S 5/0078 (2013.01); H01S 5/0428 (2013.01); H01S 5/0656 (2013.01); H01S 2301/08 (2013.01);
Abstract
This disclosed subject matter allows short pulses with high peak powers to be obtained from seed pulses generated by a gain-switched diode. The gain-switched diode provides a highly stable source for optical systems such as nonlinear microscopy. The disclosed system preserves the ability to generate pulses at arbitrary repetition rates, or even pulses on demand, which can help reduce sample damage in microscopy experiments or control deliberate damage in material processing.