The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2019
Filed:
May. 17, 2016
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Kai Kimura, Kanagawa, JP;
Tatsuya Ikenuma, Shizuoka, JP;
Nobuhiro Inoue, Kanagawa, JP;
Teppei Oguni, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
To provide a power storage device with a high capacity. To provide a power storage device with a high energy density. To provide a highly reliable power storage device. To provide a long-life power storage device. To provide an electrode with a high capacity. To provide an electrode with a high energy density. To provide a highly reliable electrode. To provide a long-life electrode. The power storage device includes a first electrode and a second electrode. The first electrode includes a first current collector and a first active material layer. The first active material layer includes a first active material and a first binder. The first active material is graphite. A separation strength F of the first electrode that is measured when the first active material layer is separated from the first current collector after the first electrode is immersed in a solution at a temperature higher than or equal to 20° C. and lower than or equal to 70° C. for longer than or equal to three hours is higher than or equal to 0.05 N/cm and lower than or equal to 5 N/cm per unit width of a sample that is separated.