The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2019
Filed:
Apr. 27, 2015
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Ahmed Abou-Kandil, Elmsford, NY (US);
Keith E. Fogel, Hopewell Junction, NY (US);
Augustin J. Hong, White Plains, NY (US);
Jeehwan Kim, Los Angeles, CA (US);
Mohamed Saad, White Plains, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/044 (2014.01); H01L 31/075 (2012.01); H01L 27/146 (2006.01); H01L 31/20 (2006.01); H01L 31/0224 (2006.01); H01L 31/0288 (2006.01);
U.S. Cl.
CPC ...
H01L 31/075 (2013.01); H01L 27/14692 (2013.01); H01L 31/0288 (2013.01); H01L 31/022466 (2013.01); H01L 31/022475 (2013.01); H01L 31/022483 (2013.01); H01L 31/202 (2013.01); Y02E 10/548 (2013.01); Y02P 70/521 (2015.11);
Abstract
A photovoltaic device includes a p-type layer. An intrinsic layer is formed directly on the p-type layer and includes an interface region extending into the intrinsic layer that includes a gradually decreasing band gap energy going from the p-type layer into the intrinsic layer formed by a graded deposition temperature. An n-type layer is formed directly on the intrinsic layer.