The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2019
Filed:
Sep. 19, 2017
Genesis Photonics Inc., Tainan, TW;
Cheng-Hsueh Lu, Tainan, TW;
Hsin-Chiao Fang, Tainan, TW;
Chi-Hao Cheng, Tainan, TW;
Chih-Feng Lu, Tainan, TW;
Chi-Feng Huang, Tainan, TW;
Genesis Photonics Inc., Tainan, TW;
Abstract
A nitrogen-containing semiconductor device including a substrate, a first AlGaN buffer layer, a second AlGaN buffer layer and a semiconductor stacking layer is provided. The first AlGaN buffer layer is disposed on the substrate, and the second AlGaN buffer layer is disposed on the first AlGaN buffer layer. A chemical formula of the first AlGaN buffer layer is AlGaN, wherein 0≤x≤1. The first AlGaN buffer layer is doped with at least one of oxygen having a concentration greater than 5×10cmand carbon having a concentration greater than 5×10cm. A chemical formula of the second AlGaN buffer layer is AlGaN, wherein 0≤y≤1. The semiconductor stacking layer is disposed on the second AlGaN buffer layer.