The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2019

Filed:

Apr. 03, 2017
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventor:

Masao Uchida, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0312 (2006.01); H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/73 (2006.01); H01L 31/02 (2006.01); H01L 29/872 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/02126 (2013.01); H01L 21/02167 (2013.01); H01L 21/02378 (2013.01); H01L 21/02447 (2013.01); H01L 29/0615 (2013.01); H01L 29/0619 (2013.01); H01L 29/6606 (2013.01); H01L 29/66113 (2013.01); H01L 29/7313 (2013.01); H01L 29/872 (2013.01); H01L 31/02027 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate of a first conductivity type, having a first principal surface and a second principal surface, a silicon carbide semiconductor layer of the first conductivity type, disposed on the first principal surface, a first electrode disposed on the silicon carbide semiconductor layer, and a second electrode disposed on the second principal surface and forming an ohmic junction with the semiconductor substrate. The semiconductor device satisfies 0.13≤Rc/Rd, where Rc is the contact resistance between the second principal surface and the second electrode at room temperature and Rd is the resistance of the silicon carbide semiconductor layer in a direction normal to the first principal surface at room temperature.


Find Patent Forward Citations

Loading…