The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2019
Filed:
May. 30, 2017
Fuji Electric Co., Ltd., Kanagawa, JP;
Tetsutaro Imagawa, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
A semiconductor layer of a first conductivity type has a plurality of impurity concentration peaks that are differently positioned in a first direction extending from a first surface to a second surface, and an integrated concentration obtained by integrating an impurity concentration value in the first direction from (i) the first surface that is a junction interface between the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type to (ii) a boundary between a first impurity concentration peak of the plurality of impurity concentration peaks that is the closest to the first surface and a second impurity concentration peak of the plurality of impurity concentration peaks that is the second closest to the first surface is equal to or lower than a critical integrated concentration.