The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2019
Filed:
May. 15, 2017
Canon Kabushiki Kaisha, Tokyo, JP;
Takehiko Soda, Yokohama, JP;
Akira Okita, Yamato, JP;
CANON KABUSHIKI KAISHA, Tokyo, JP;
Abstract
Provided is a solid state image pickup element including a MOS type transistor which amplifies a signal which is based on electric charges generated in a photoelectric conversion unit of a pixel. A channel region of the transistor is divided into a source-side region and a drain-side region. When a conductivity type of the transistor is defined as a first conductivity type and a conductivity type which is opposite to the first conductivity type is defined as a second conductivity type, a concentration of a first conductivity type impurity in the source-side region is higher than a concentration of the first conductivity type impurity in the drain-side region or a concentration of a second conductivity type impurity in the drain-side region is higher than a concentration of the second conductivity type impurity in the source-side region.