The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10229884 B1

Date of Patent:

Mar. 12, 2019

Filed:

Aug. 01, 2017

Semiconductor device

Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;

Inventor:

Naoki Saegusa, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-shi, Kanagawa, JP;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

Mark W Tornow

Int. Cl.

CPC ...

H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/04 (2006.01); H01L 23/538 (2006.01); H01L 23/08 (2006.01); H01L 23/31 (2006.01); H01L 23/34 (2006.01); H01L 23/498 (2006.01); H01L 25/065 (2006.01); H01L 23/367 (2006.01);

U.S. Cl.

CPC ...

H01L 23/5385 (2013.01); H01L 21/4817 (2013.01); H01L 23/04 (2013.01); H01L 23/08 (2013.01); H01L 23/3121 (2013.01); H01L 23/34 (2013.01); H01L 23/49861 (2013.01); H01L 23/5386 (2013.01); H01L 24/48 (2013.01); H01L 25/0655 (2013.01); H01L 23/367 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48175 (2013.01); H01L 2224/48225 (2013.01); H01L 2224/73265 (2013.01);

Abstract

A semiconductor device includes a lead frame. One end portion of the lead frame is disposed outside a case, the other end portion of the lead frame is disposed over a front surface of an insulating board inside the case and near a semiconductor element, and the lead frame is formed in the case. Furthermore, the semiconductor device includes a temperature transducer disposed on a side of the other end portion of the lead frame opposite a laminated substrate and near a side portion of a semiconductor element. As a result, the temperature transducer is disposed near the side portion of the semiconductor element in the semiconductor device. Therefore, the temperature of the semiconductor element is properly detected. In addition, the length in the vertical direction of the case of the semiconductor device is reduced and miniaturization is realized.

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