The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2019
Filed:
Aug. 08, 2014
Renesas Electronics Corporation, Tokyo, JP;
Yoshihiro Nomura, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
A semiconductor device includes an insulating film formed to cover an electric fuse (EF), an insulating film (IL), an insulating film (IL), an electric fuse (EF), an insulating film (IL), and an insulating film (IL). The electric fuse (EF) includes a fuse-blowing portion (FC), a first pad portion (PD), and a second pad portion (PD). The fuse-blowing portion (FC) is formed between the first pad portion (PD) and the second pad portion (PD) in a first direction and is a rectangular shape having a first short side and a second short side along a second direction perpendicular to the first direction. The insulating film (IL) is formed continuously between the first short side and the second short side to cover the surface of the fuse-blowing portion (FC). The insulating film (IL) is formed to planarly surround the insulating film (IL) and is arranged at an interval from the insulating film (IL). The stress of the insulating film (IL) and the insulating film (IL) is greater than a stress of the insulating film covering the insulating films.