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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10229876 B1

PDFFull Text
Date of Patent:
Mar. 12, 2019

Filed:

Mar. 17, 2016

Wiring structures and semiconductor devices

Applicants:

Jun-jung Kim, Suwon-si, KR;

Young-bae Kim, Yongin-si, KR;

Jong-sam Kim, Hwaseong-si, KR;

Jin-hyeung Park, Suwon-si, KR;

Jeong-hoon Ahn, Yongin-si, KR;

Hyeok-sang OH, Suwon-si, KR;

Kyoung-woo Lee, Hwaseong-si, KR;

Hyo-seon Lee, Yongin-si, KR;

Suk-hee Jang, Suwon-si, KR;

Inventors:

Jun-Jung Kim, Suwon-si, KR;

Young-Bae Kim, Yongin-si, KR;

Jong-Sam Kim, Hwaseong-si, KR;

Jin-Hyeung Park, Suwon-si, KR;

Jeong-Hoon Ahn, Yongin-si, KR;

Hyeok-Sang Oh, Suwon-si, KR;

Kyoung-Woo Lee, Hwaseong-si, KR;

Hyo-Seon Lee, Yongin-si, KR;

Suk-Hee Jang, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Renaissance IP Law Group LLP

Primary Examiner:

Cuong Q Nguyen

Assistant Examiner:

Tong-Ho Kim

Int. Cl.
CPC ...
H01L 23/535 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 27/088 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 23/485 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/76802 (2013.01); H01L 21/76807 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01); H01L 23/53295 (2013.01); H01L 21/76873 (2013.01); H01L 21/76882 (2013.01); H01L 21/823475 (2013.01); H01L 23/485 (2013.01); H01L 27/088 (2013.01);
Abstract

A wiring structure includes a substrate, a lower insulation layer on the substrate, a lower wiring in the lower insulation layer, a first etch-stop layer covering the lower wiring and including a metallic dielectric material, a second etch-stop layer on the first etch-stop layer and the lower insulation layer, an insulating interlayer on the second etch-stop layer, and a conductive pattern extending through the insulating interlayer, the second etch-stop layer and the first etch-stop layer and electrically connected to the lower wiring.

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