The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2019

Filed:

May. 01, 2017
Applicant:

The United States of America, As Represented BY the Secretary of the Navy, Washington, DC (US);

Inventors:

Travis J. Anderson, Alexandria, VA (US);

Boris N. Feygelson, Springfield, VA (US);

Andrew D. Koehler, Alexandria, VA (US);

Karl D. Hobart, Alexandria, VA (US);

Francis J. Kub, Arnold, MD (US);

Jordan Greenlee, Vienna, VA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3245 (2013.01); H01L 21/0254 (2013.01); H01L 29/2003 (2013.01); H01L 21/2654 (2013.01);
Abstract

An method of annealing by: providing a substrate having a III-nitride, sapphire, silicon, diamond, gallium arsenide, or silicon carbide surface; depositing a layer of a transition metal nitride directly on the surface; and annealing the substrate at at least 900° C. in an oxygen-free environment. An article having: a substrate having a III-nitride, sapphire, silicon, diamond, gallium arsenide, or silicon carbide surface; and a layer of a transition metal nitride directly on the surface.


Find Patent Forward Citations

Loading…