The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2019
Filed:
Jul. 21, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Youngjo Tak, Seongnam-si, KR;
Sammook Kang, Hwaseong-si, KR;
Mihyun Kim, Seoul, KR;
Junyoun Kim, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of fabricating a nitride semiconductor substrate including forming a buffer layer on a surface of a growth substrate, growing a first nitride semiconductor layer on the buffer layer, growing a second nitride semiconductor layer on the first nitride semiconductor layer, and removing the growth substrate may be provided. The forming a buffer layer may deform the surface of the growth substrate to have a convex shape. The forming a buffer layer and the growing a first nitride semiconductor layer may be performed within a first process chamber. The growing a second nitride semiconductor layer and the removing the growth substrate may be performed within a second process chamber.