The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2019
Filed:
Mar. 31, 2017
Eun Chu OH, Hwaseong-si, KR;
Pilsang Yoon, Hwaseong-si, KR;
Jun Jin Kong, Yongin-si, KR;
Hong Rak Son, Anyang-si, KR;
Dongsup Jin, Seoul, KR;
Eun Chu Oh, Hwaseong-si, KR;
Pilsang Yoon, Hwaseong-si, KR;
Jun Jin Kong, Yongin-si, KR;
Hong Rak Son, Anyang-si, KR;
Dongsup Jin, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A nonvolatile memory storage system includes a plurality of memory cells and a memory controller configured to transmit a read command to a nonvolatile memory device based on a plurality of read voltages. The nonvolatile memory device performs a first read operation on a first level among the N levels based on a first read voltage among the plurality of read voltages, counts the number of on-cells that respond to the first read voltage among the plurality of memory cells, and adjusts a level of a second read voltage to be used to perform a second read operation on the first level or a second level among the N levels among the plurality of read voltages according to a comparison result of the counted number of on-cells and the number of reference cells.