The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2019

Filed:

Mar. 09, 2015
Applicant:

Kyoto University, Kyoto-shi, Kyoto, JP;

Inventors:

Kazuki Nakanishi, Kyoto, JP;

Nirmalya Moitra, Mumbai, IN;

Kazuyoshi Kanamori, Kyoto, JP;

Toyoshi Shimada, Kyoto, JP;

Assignee:

KYOTO UNIVERSITY, Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09C 1/30 (2006.01); C08B 15/05 (2006.01); C04B 35/628 (2006.01); C09C 1/00 (2006.01); B01J 31/14 (2006.01); C07F 9/535 (2006.01); C07F 17/02 (2006.01); C07F 9/40 (2006.01); C07F 7/08 (2006.01); C03C 17/30 (2006.01); C09D 5/16 (2006.01); D06M 13/513 (2006.01); D06M 101/24 (2006.01); D06M 101/32 (2006.01); D21C 9/00 (2006.01); D21H 25/02 (2006.01);
U.S. Cl.
CPC ...
C09C 1/3081 (2013.01); B01J 31/14 (2013.01); C03C 17/30 (2013.01); C04B 35/628 (2013.01); C04B 35/62805 (2013.01); C04B 35/62807 (2013.01); C04B 35/62813 (2013.01); C04B 35/62815 (2013.01); C04B 35/62821 (2013.01); C04B 35/62823 (2013.01); C04B 35/62886 (2013.01); C07F 7/0838 (2013.01); C07F 7/0896 (2013.01); C07F 9/4012 (2013.01); C07F 9/5355 (2013.01); C07F 17/02 (2013.01); C08B 15/05 (2013.01); C09C 1/00 (2013.01); C09C 1/30 (2013.01); C09C 1/3063 (2013.01); C09C 1/3072 (2013.01); C09D 5/1681 (2013.01); D06M 13/513 (2013.01); C04B 2235/3218 (2013.01); C04B 2235/3232 (2013.01); C04B 2235/3244 (2013.01); C04B 2235/3286 (2013.01); C04B 2235/3418 (2013.01); C04B 2235/3445 (2013.01); C04B 2235/483 (2013.01); D06M 2101/24 (2013.01); D06M 2101/32 (2013.01); D06M 2200/12 (2013.01); D06M 2400/01 (2013.01); D21C 9/005 (2013.01); D21H 25/02 (2013.01);
Abstract

The method for producing a surface-modified base material according to the present invention includes a step of bringing a base material having a polar group present on a surface thereof into contact with a hydrosilane compound having a molecular structure A and having a Si—H group composed of a silicon atom of the molecular structure A and a hydrogen atom bonded to the silicon atom in the presence of a borane catalyst so as to allow a dehydrocondensation reaction to take place between the base material and the compound, thereby forming the base material surface-modified with the molecular structure A. This production method is capable of surface-modifying a base material at a lower temperature in a shorter time than conventional methods and allows a wide variety of options for the form, type, and application of the base material, the mode of the modification reaction, and the type of the molecular structure with which the base material is surface-modified.


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