The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2019

Filed:

Feb. 25, 2016
Applicant:

Jx Nippon Mining & Metals Corporation, Tokyo, JP;

Inventors:

Atsushi Nara, Ibaraki, JP;

Hideto Seki, Ibaraki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01B 1/08 (2006.01); C04B 35/08 (2006.01); C23C 14/00 (2006.01); C04B 35/453 (2006.01); C04B 35/00 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01); H01B 5/14 (2006.01);
U.S. Cl.
CPC ...
C04B 35/453 (2013.01); C04B 35/00 (2013.01); C23C 14/08 (2013.01); C23C 14/086 (2013.01); C23C 14/34 (2013.01); C23C 14/3414 (2013.01); H01B 1/08 (2013.01); H01B 5/14 (2013.01); C04B 2235/3284 (2013.01); C04B 2235/3286 (2013.01); C04B 2235/54 (2013.01); C04B 2235/77 (2013.01);
Abstract

A sintered compact essentially consisting of zinc (Zn), gallium (Ga), silicon (Si) and oxygen (O), wherein a Zn content expressed in terms of ZnO is 5 to 60 mol %, a Ga content expressed in terms of GaOis 8.5 to 90 mol %, and a Si content expressed in terms of SiOis 0 to 45 mol %, and the sintered compact satisfies a condition of A≤(B+2C) when the Zn content expressed in terms of ZnO is A (mol %), the Ga content expressed in terms of GaOis B (mol %), and the Si content expressed in terms of SiOis C (mol %), and has a relative density of 90% or higher. An object of this invention is to efficiently obtain an amorphous film having high transmissivity and a low refractive index without having to introduce oxygen into the atmosphere during film deposition by DC sputtering.


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