The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2019
Filed:
Oct. 20, 2005
Applicants:
Seth Coe-sullivan, Belmont, MA (US);
Jonathan S. Steckel, Cambridge, MA (US);
Leeann Kim, Dover, MA (US);
Moungi G. Bawendi, Cambridge, MA (US);
Vladimir Bulovic, Lexington, MA (US);
Inventors:
Seth Coe-Sullivan, Belmont, MA (US);
Jonathan S. Steckel, Cambridge, MA (US);
LeeAnn Kim, Dover, MA (US);
Moungi G. Bawendi, Cambridge, MA (US);
Vladimir Bulovic, Lexington, MA (US);
Assignee:
MASSACHUSETTS INSTITUTE OF TECHNOLOGY, Cambridge, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05B 33/10 (2006.01); B41M 5/025 (2006.01); B82Y 20/00 (2011.01); B82Y 30/00 (2011.01); H01L 21/67 (2006.01); B41J 2/005 (2006.01); B41M 3/00 (2006.01); H05B 33/14 (2006.01); H01L 51/50 (2006.01); H01L 51/56 (2006.01); B41M 1/02 (2006.01);
U.S. Cl.
CPC ...
H05B 33/10 (2013.01); B41J 2/0057 (2013.01); B41M 3/003 (2013.01); B41M 5/0256 (2013.01); B82Y 20/00 (2013.01); B82Y 30/00 (2013.01); H01L 21/6715 (2013.01); H05B 33/145 (2013.01); B41M 1/02 (2013.01); H01L 51/502 (2013.01); H01L 51/5012 (2013.01); H01L 51/56 (2013.01);
Abstract
A light emitting device includes a semiconductor nanocrystal in a layer. The layer can be a monolayer of semiconductor nanocrystals. The monolayer can form a pattern on a substrate.