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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10224463 B1

PDFFull Text
Date of Patent:
Mar. 05, 2019

Filed:

Jul. 06, 2015

Film forming method, method of manufacturing semiconductor light-emitting device, semiconductor light-emitting device, and illuminating device

Applicant:

Canon Anelva Corporation, Kawasaki-shi, JP;

Inventor:

Yoshiaki Daigo, Kawasaki, JP;

Assignee:

CANON ANELVA CORPORATION, Kawasaki-Shi, JP;

Attorney:

Venable LLP

Primary Examiner:

Hoang-Quan Ho

Assistant Examiner:

Quovaunda V Jefferson

Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/44 (2010.01); H01L 33/12 (2010.01); H01L 21/02 (2006.01); C30B 23/02 (2006.01); C30B 29/40 (2006.01); C23C 14/06 (2006.01); C23C 14/34 (2006.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/44 (2013.01); C23C 14/0617 (2013.01); C23C 14/34 (2013.01); C30B 23/025 (2013.01); C30B 29/403 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/02573 (2013.01); H01L 21/02581 (2013.01); H01L 33/005 (2013.01); H01L 33/007 (2013.01); H01L 33/12 (2013.01); H01L 33/32 (2013.01); H01L 2221/00 (2013.01); H01L 2933/0025 (2013.01);
Abstract

An object of the present invention is to provide a film formation technique having high productivity by realizing a foundation layer having excellent crystallinity with a small film thickness of about 2 μm. An embodiment of the present invention relates to a film forming method which includes the step of forming a buffer layer by sputtering on a sapphire substrate held by a substrate holder. The buffer layer includes an epitaxial film having a wurtzite structure prepared by adding at least one substance selected from the group consisting of C, Si, Ge, Mg, Zn, Mn, and Cr to AlGaN (where 0≤x≤1).

Find Patent Forward Citations

Daigo, Yoshiaki. (2019). Film forming method, method of manufacturing semiconductor light-emitting device, semiconductor light-emitting device, and illuminating device (U.S. Patent No. 10224463). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10224463

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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