The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2019

Filed:

Jun. 27, 2017
Applicant:

Avago Technologies International Sales Pte. Limited, Singapore, SG;

Inventors:

Claudio Piemonte, Trento, IT;

Alberto Giacomo Gola, Trento, IT;

Giovanni Paternoster, Trento, IT;

Fabio Acerbi, Moglia, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/107 (2006.01); H01L 31/02 (2006.01); H01L 31/0216 (2014.01); H01L 27/144 (2006.01); H01L 49/02 (2006.01); G01J 1/44 (2006.01);
U.S. Cl.
CPC ...
H01L 31/107 (2013.01); G01J 1/44 (2013.01); H01L 27/1443 (2013.01); H01L 27/1446 (2013.01); H01L 28/20 (2013.01); H01L 31/02005 (2013.01); H01L 31/02027 (2013.01); H01L 31/02161 (2013.01); G01J 2001/4466 (2013.01);
Abstract

A semiconductor device, silicon photomultiplier, and sensor are described. The disclosed semiconductor device is disclosed to include a substrate, a photosensitive area provided on the substrate, the photosensitive area corresponding to an area in which an electrical signal is generated in response to light impacting the photosensitive area, at least one trench substantially surrounding the photosensitive area, the at least one trench extending at least partially into the substrate, and a resistor confined by the at least one trench and in electrical communication with the active area such that the resistor is configured to carry electrical signals generated by the photosensitive area to a metal contact.


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