The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2019

Filed:

Apr. 03, 2018
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventor:

Masao Uchida, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/872 (2006.01); H01L 29/16 (2006.01); H01L 21/04 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 21/0465 (2013.01); H01L 29/0623 (2013.01); H01L 29/1608 (2013.01); H01L 29/6606 (2013.01); H01L 29/66068 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate, a silicon carbide semiconductor layer disposed on the semiconductor substrate, and a termination region disposed in the silicon carbide semiconductor layer. The termination region has a guard ring region and an FLR region which is disposed to surround the guard ring region while being separated from the guard ring region, the FLR region including a plurality of rings. The termination region includes a sector section, and in the sector section, an inner circumference and an outer circumference of at least one of the plurality of rings and an inner circumference and an outer circumference of the guard ring region have a same first center of curvature, the first center of curvature being positioned inside the inner circumference of the guard ring region, and a radius of curvature of the inner circumference of the guard ring region is 50 μm or less.


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