The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2019
Filed:
Nov. 06, 2017
Applicant:
Samsung Display Co., Ltd., Yongin-si, Gyeonggi-do, KR;
Inventor:
Hwangsup Shin, Yongin-si, KR;
Assignee:
SAMSUNG DISPLAY CO., LTD., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/3233 (2016.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/423 (2006.01); G09G 3/20 (2006.01); G09G 3/3225 (2016.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); G09G 3/2007 (2013.01); G09G 3/3225 (2013.01); H01L 27/124 (2013.01); H01L 27/1222 (2013.01); H01L 27/1255 (2013.01); H01L 29/42384 (2013.01); H01L 29/78648 (2013.01); G09G 2300/0426 (2013.01); H01L 27/3262 (2013.01);
Abstract
A multi-channel thin film transistor ('TFT') includes: a gate electrode; a semiconductor including a first channel area, which operates within a first driving range and has a first threshold voltage, and a second channel area which operates within a second driving range smaller than the first driving range and has a second threshold voltage, where an absolute value of the second threshold voltage is greater than an absolute value of the first threshold voltage; a first electrode connected to an end of the semiconductor; and a second electrode connected to another end of the semiconductor.